Quantum well intermixing in AlInGaAs QW structures through the interdiffusion of group III atoms
In this paper, the composition profiles within intermixed AlInGaAs-based multiple quantum wells structure are analyzed by secondary ion mass spectrometry and the bandgap blue shift is found to be mainly attributed to the interdiffusion of In and Ga between the quantum wells and barriers. Based on these results, AlInGaAs-based single quantum well
Lee, Ko-Hsin et al.
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2012